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mrfe6vp5600hr6 mrfe6vp5600hsr6 1 rf device data freescale semiconductor rf power field effect transistors high ruggedness n--channel enhancement--mode lateral mosfets these high ruggedness devices are designed for use in high vswr industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications . they are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 mhz. ? typical performance: v dd =50volts,i dq = 100 ma signal type p out (w) f (mhz) g ps (db) d (%) irl (db) pulsed (100 sec, 20% duty cycle) 600 peak 230 25.0 74.6 -- 1 8 cw 600 avg. 230 24.6 75.2 -- 1 7 ? capable of handling a load mismatch of 65:1 vswr, @ 50 vdc, 230 mhz, at all phase angles, designed for enhanced ruggedness ? 600 watts pulsed peak power, 20% duty cycle, 100 sec features ? unmatched input and output allowing wide frequency range utilization ? device can be used single--ended or in a push--pull configuration ? qualified up to a maximum of 50 v dd operation ? characterized from 30 v to 50 v for extended power range ? suitable for linear application with appropriate biasing ? integrated esd protection with gr eater negative gate--source voltage range for improved class c operation ? characterized with series equival ent large--signal impedance parameters ? rohs compliant ? in tape and reel. r6 suffix = 150 units, 56 mm tape width, 13 inch reel. for r5 tape and reel options, see p. 12. table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +130 vdc gate--source voltage v gs --6.0, +10 vdc storage temperature range t stg -- 65 to +150 c case operating temperature t c 150 c total device dissipation @ t c =25 c derate above 25 c p d 1667 8.33 w w/ c operating junction temperature (1,2) t j 225 c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 68 c, 600 w pulsed, 100 sec pulse width, 20% duty cycle, 100 ma, 230 mhz case temperature 60 c, 600 w cw, 100 ma, 230 mhz z jc r jc 0.022 0.12 c/w 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/devel opment tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. document number: mrfe6vp5600h rev. 1, 1/2011 freescale semiconductor technical data 1.8--600 mhz, 600 w cw, 50 v lateral n--channel broadband rf power mosfets mrfe6vp5600hr6 mrfe6vp5600hsr6 (top view) rf out /v ds 31 figure 1. pin connections 42 rf out /v ds rf in /v gs rf in /v gs case 375d--05, style 1 ni--1230 mrfe6vp5600hr6 case 375e--04, style 1 ni--1230s mrfe6vp5600hsr6 parts are push--pull ? freescale semiconductor, inc., 2010--2011. a ll rights reserved.
2 rf device data freescale semiconductor mrfe6vp5600hr6 mrfe6vp5600hsr6 table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2 (minimum) machine model (per eia/jesd22--a115) b (minimum) charge device model (per jesd22--c101) iv (minimum) table 4. electrical characteristics (t a =25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics (1) gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 adc drain--source breakdown voltage (v gs =0vdc,i d = 100 ma) v (br)dss 130 ? ? vdc zero gate voltage drain leakage current (v ds =50vdc,v gs =0vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 100 vdc, v gs =0vdc) i dss ? ? 20 adc on characteristics gate threshold voltage (1) (v ds =10vdc,i d = 960 adc) v gs(th) 1.7 2.2 2.7 vdc gate quiescent voltage (v dd =50vdc,i d = 100 madc, measured in functional test) v gs(q) 2.0 2.5 3.0 vdc drain--source on--voltage (1) (v gs =10vdc,i d =2adc) v ds(on) ? 0.26 ? vdc dynamic characteristics (1) reverse transfer capacitance (v ds =50vdc 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c rss ? 1.60 ? pf output capacitance (v ds =50vdc 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c oss ? 129 ? pf input capacitance (v ds =50vdc,v gs =0vdc 30 mv(rms)ac @ 1 mhz) c iss ? 342 ? pf functional tests (in freescale test fixture, 50 ohm system) v dd =50vdc,i dq = 100 ma, p out = 600 w peak (120 w avg.), f = 230 mhz, pulsed, 100 sec pulse width, 20% duty cycle power gain g ps 23.5 25.0 26.5 db drain efficiency d 73.5 74.6 ? % input return loss irl ? -- 1 8 -- 1 2 db 1. each side of device measured separately.
mrfe6vp5600hr6 mrfe6vp5600hsr6 3 rf device data freescale semiconductor figure 1. mrfe6vp5600hr6(hsr6) test circuit schematic -- pulsed rf input z1 dut z16 z18 z17 c16 c4 z23 z25 coax1 coax2 z27 c10 + l1 c17 c18 c19 z28 z26 c15 z24 c1 z11 c12 c11 c13 z15 z21 z22 c14 v bias v supply c23 c24 + c22 c25 + l4 z2 z3 z4 c2 c3 z5 z6 z7 z8 c5 z9 z10 l2 r1 z12 r2 c6 + c8 c7 c9 v bias z13 z14 z20 z19 l3 + v supply c27 c28 + c26 c29 + + c21 rf output z31 coax3 coax4 z32 c20 z29 z30 z23, z24 1.251 x 0.300 microstrip z25, z26 0.127 x 0.300 microstrip z27, z28 0.058 x 0.300 microstrip z29, z30 0.058 x 0.300 microstrip z31 0.186 x 0.082 microstrip z32 0.179 x 0.082 microstrip * line length includes microstrip bends z1 0.192 x 0.082 microstrip z2 0.175 x 0.082 microstrip z3, z4 0.170 x 0.100 microstrip z5, z6 0.116 x 0.285 microstrip z7, z8 0.116 x 0.285 microstrip z9, z10 0.108 x 0.285 microstrip z11*, z12* 0.872 x 0.058 microstrip z13, z14 0.412 x 0.726 microstrip z15, z16 0.371 x 0.507 microstrip z17*, z18* 0.466 x 0.363 microstrip z19*, z20* 1.187 x 0.154 microstrip z21, z22 0.104 x 0.507 microstrip
4 rf device data freescale semiconductor mrfe6vp5600hr6 mrfe6vp5600hsr6 figure 2. mrfe6vp5600hr6(hsr6) test circuit component layout -- pulsed mrfe6vp5600h rev. 1 coax2 coax1 coax4 coax3 c10 c11 c12 c13 r1 c1 c2 c3 c4 l1 l2 c5 c14 r2 c6 c7 c8 c9 c27 c28 c29 c26 l4 c19 c18 c15 c21 c17 c16 l3 c23 c24 c25 c22 c20 table 5. mrfe6vp5600hr6(hsr6) test circui t component designations and values -- pulsed part description part number manufacturer c1 12 pf chip capacitor atc100b120jt500xt atc c2, c3 27 pf chip capacitors atc100b270jt500xt atc c4 0.8--8.0 pf variable capacitor, gigatrim 27291sl johanson c5 33 pf chip capacitor atc100b330jt500xt atc c6, c10 22 f, 35 v tantalum capacitors t491x226k035at kemet c7, c11 0.1 f chip capacitors cdr33bx104akys avx c8, c12 220 nf chip capacitors c1812c224k5ractu kemet c9, c13, c22, c26 1000 pf chip capacitors atc100b102jt50xt atc c14 36 pf chip capacitor atc100b360jt500xt atc c15 51 pf chip capacitor atc100b510gt500xt atc c16, c17, c18, c19 240 pf chip capacitors atc100b241jt200xt atc c20 39 pf chip capacitor atc100b390jt500xt atc c21 10 pf chip capacitor atc100b100jt500xt atc c23, c24, c25, c27, c28, c29 470 f, 63 v electrolytic capacitors mcgpr63v477m13x26--rh multicomp coax1, 2, 3, 4 25 ? semi rigid coax, 2.2 long ut--141c--25 micro coax l1, l2 5 nh inductors a02tklc coilcraft l3, l4 6.6 nh inductors ga3093--alc coilcraft r1, r2 10 ? chip resistors crcw120610r0jnea vishay pcb 0.030 , r =2.55 ad255a arlon
mrfe6vp5600hr6 mrfe6vp5600hsr6 5 rf device data freescale semiconductor typical characteristics 50 10 020 10 v ds , drain--source voltage (volts) figure 3. capacitance versus drain--source voltage c, capacitance (pf) 30 c iss 1000 100 40 measured with 30 mv(rms)ac @ 1 mhz v gs =0vdc note: each side of device measured separately. 1 57 64 31 p in , input power (dbm) pulsed figure 4. pulsed output power versus input power 62 32 33 34 35 36 37 p out , output power (dbm) pulsed 61 58 actual ideal v dd =50vdc,i dq = 100 ma, f = 230 mhz pulse width = 100 sec, 20% duty cycle p1db = 58.0 dbm (632 w) 60 59 63 p3db = 58.3 dbm (679 w) p2db = 58.2 dbm (664 w) 27 20 90 100 24 70 50 p out , output power (watts) pulsed figure 5. pulsed power gain and drain efficiency versus output power g ps , power gain (db) d, drain efficiency (%) 22 20 1000 21 40 60 80 23 25 17 24 0 21 20 p out , output power (watts) pulsed figure 6. pulsed power gain versus output power g ps , power gain (db) 100 19 700 v dd =50vdc,i dq = 100 ma, f = 230 mhz pulse width = 100 sec, 20% duty cycle 18 200 400 500 600 v dd =30v 50 v 22 23 26 25 27 300 35 v 40 v 45 v 20 90 0 p out , output power (watts) pulsed figure 7. pulsed drain efficiency versus output power 70 100 200 300 400 500 600 60 30 50 40 80 700 figure 8. pulsed power gain and drain efficiency versus output power p out , output power (watts) pulsed g ps , power gain (db) 20 22 21 100 1000 d 25 _ c t c =--30 _ c 85 _ c g ps v dd =50vdc,i dq = 100 ma, f = 230 mhz pulse width = 100 sec, 20% duty cycle 40 60 50 20 30 d , drain efficiency (%) 85 _ c v dd =50vdc,i dq = 100 ma, f = 230 mhz pulse width = 100 sec, 20% duty cycle v dd =30v 50 v 35 v 40 v 45 v d, drain efficiency (%) 25 24 23 27 26 70 80 90 c rss d g ps v dd =50vdc,i dq = 100 ma, f = 230 mhz pulse width = 100 sec, 20% duty cycle 26 30 40 40 c oss -- 3 0 _ c 25 _ c
6 rf device data freescale semiconductor mrfe6vp5600hr6 mrfe6vp5600hsr6 typical characteristics 250 10 9 90 t j , junction temperature ( c) figure 9. mttf versus junction temperature ? cw this above graph displays calculated mttf in hours when the device is operated at v dd =50vdc,p out = 600 w avg., and d = 75.2%. mttf calculator available at http://www.freescale.com/rf. select software & tools/development tools/calculators to access mttf calculators by product. 10 7 10 6 10 4 110 130 150 170 190 mttf (hours) 210 230 10 8 10 5
mrfe6vp5600hr6 mrfe6vp5600hsr6 7 rf device data freescale semiconductor z o =10 ? z load z source f = 230 mhz f = 230 mhz v dd =50vdc,i dq = 100 ma, p out = 600 w peak f mhz z source ? z load ? 230 1.78 + j5.45 2.75 + j5.30 z source = test circuit impedance as measured from gate to gate, balanced configuration. z load = test circuit impedance as measured from drain to drain, balanced configuration. figure 10. series equivalent source and load impedance z source z load input matching network device under test output matching network -- -- + +
8 rf device data freescale semiconductor mrfe6vp5600hr6 mrfe6vp5600hsr6 package dimensions
mrfe6vp5600hr6 mrfe6vp5600hsr6 9 rf device data freescale semiconductor
10 rf device data freescale semiconductor mrfe6vp5600hr6 mrfe6vp5600hsr6
mrfe6vp5600hr6 mrfe6vp5600hsr6 11 rf device data freescale semiconductor
12 rf device data freescale semiconductor mrfe6vp5600hr6 mrfe6vp5600hsr6 product documentation and software refer to the following documents and software to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file for software, do a part number search at http://www.freescale.c om, and select the ?part num ber? link. go to the software & tools tab on the part?s product summary page to download the respective tool. r5 tape and reel option r5 suffix = 50 units, 56 mm tape width, 13 inch reel. the r5 tape and reel option for mrfe6vp5600h and mrfe6vp5600hs parts will be available for 2 years after release of mrfe6vp5600h and mrfe6vp5600hs. freescale semiconductor, inc. reserves the right to limit the quantities that will be delivered in the r5 tape and reel option. at the end of the 2 year period customers who have purchased these devices in the r5 tape and reel option will be offered mrfe6vp5600h and mrfe6vp5600hs in the r6 tape and reel option. revision history the following table summarizes revisions to this document. revision date description 0 dec. 2010 ? initial release of data sheet 1 jan. 2011 ? fig. 1, pin connections, corrected pin 4 label from rf out /v gs to rf in /v gs ,p.1
mrfe6vp5600hr6 mrfe6vp5600hsr6 13 rf device data freescale semiconductor information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regar ding the suitab ility of its products for any particula r purpose, nor does freescale semiconductor assu me any liability ari sing out of the app lication or use of any product or circuit, and specifically discl aims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems int ended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subs idiaries, affiliate s, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale t and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2010--2011. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33169354848(french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1--8--1, shimo--meguro, meguro--ku, tokyo 153--0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1--800--441--2447 or +1--303--675--2140 fax: +1--303--675--2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrfe6vp5600h rev. 1, 1/2011

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